Study of plasma enhanced chemical vapor deposition of ZnO films by non-thermal plasma jet at atmospheric pressure

Determination of Optical Properties in Germanium Carbon Coatings Deposited by Plasma Enhanced Chemical Vapor Deposition

In this research, Germanium-carbon coatings were deposited on ZnS substrates by plasma enhanced chemical vapor deposition (PECVD) using GeH4 and CH4 precursors. Optical parameters of the Ge1-xCx coating such as refractive index, Absorption coefficient, extinction coefficient and band gap were measured by the Swanepoel method based on the transmittance spectrum. The results showed that the refra...

Plasma-enhanced chemical vapor deposition of zinc oxide at atmospheric pressure and low temperature

The plasma-enhanced chemical vapor deposition of aluminum-doped zinc oxide has been demonstrated for the first time at 800Torr and under 250 1C. A film resistivity of 3 10 2 O cm and a transparency of 95% from 375 to 2500 nm was obtained for deposition at 20mTorr diethylzinc, 1.0 Torr CO2, 799Torr He, a TMAl/DEZn ratio of 1:100, 41W=cm RF power, and 225 1C. The average aluminum concentration in...

Plasma-enhanced Chemical Vapor Deposition of silicon dioxide Optimizing dielectric films through plasma characterization

Growth mechanism and properties of ZnO nanorods synthesized by plasma-enhanced chemical vapor deposition

Uniformly distributed ZnO nanorods have been grown by plasma-enhanced chemical vapor deposition using a two-step process. By controlling the oxygen content in the gas mixture during the nucleation and growth steps, no catalyst is required for the formation of ZnO nanorods. High-resolution transmission electron microscopy studies show that ZnO nanorods are single crystals and that they grow alon...

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma

Silicon carbide films were deposited by radio frequency thermal plasma chemical vapor deposition (CVD) at rates up to several hundred micrometers per hour over a 40-mm diameter substrate. The films were primarily h-phase SiC. Film morphology was characterized by columnar growth terminating in hemispherical surfaces. The average crystallite size as determined by X-ray diffraction line broadening...